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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1375 DESCRIPTION *With TO-3 package *High breakdown voltage *High power dissipation APPLICATIONS *Designed for line operated audio output amplifier ,and switching power supply drivers applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=75 Open emitter Open base Open collector CONDITIONS VALUE 300 300 7 4 90 150 -55~150 UNIT V V V A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO(SUS) V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE PARAMETER Collector-emitter sustaining voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=30mA ;IB=0 IC=1mA ;IE=0 IE=1mA ;IC=0 IC=3A; IB=0.6A IC=3A; IB=0.6A VCB=300V; IE=0 VEB=7V; IC=0 IC=1A ; VCE=5V 30 MIN 300 300 7 2SD1375 TYP. MAX UNIT V V V 1.0 1.5 0.1 0.1 V V mA mA 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1375 Fig.2 outline dimensions (unindicated tolerance:0.1mm) 3 |
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